Department of Chemical Engineering at the University of Texas at Austin go to home page university of texas at austin college of engineering U T direct
Gyeong S. Hwang, PhD
Associate Professor and Myron L. Begeman Fellow in Engineering


photo of Gyeong S. Hwang
Office: CPE 4.404 Mailing Address:
Phone: (512) 471-4847 The University of Texas at Austin
Fax: -- Department of Chemical Engineering
Email: gshwang@che.utexas.edu 1 University Station C0400
UT Mail: C0400 Austin, TX 78712-0231

Research Group Site

Presentation Made to Prospective Graduate Students 2008

Educational qualifications:
Ph.D., Chemical Engineering, California Institute of Technology (1999)
M.S., Applied Physics, California Institute of Technology (1998)
M.S., Chemical Engineering, Seoul National University (1993)
B.S., Chemical Engineering, Seoul National University (1991)
F.M. Becket Fellow of The Electrochemical Society, Theory Department (Prof. M. Parrinello)
Max-Planck-Institute for Solid State Research, Stuttgart, Germany (1999)
Postdoctoral Fellow, Materials & Process Simulation Center (Prof. W.A. Goddard III)
California Institute of Technology (2000-2001)

NSF Career Award, National Science Foundation (2005)

Myron L. Begeman Fellowship in Engineering, The University of Texas at Austin (2005)

F. M. Becket Summer Fellowship, The Electrochemical Society (to student Scott Harrison, 2005)

CCG Excellence Award, The American Chemical Society (to student Devina Pillay, 2005)

The F.M. Becket Memorial Award, The Electrochemical Society (1999)

The Colin Garfield Fink Fellowship, The Electrochemical Society (1998)

Graduate Research Award, The American Vacuum Society (1997)

The Constantin G. Economou Memorial Lecture and Prize, California Institute of Technology (1996)

Il-Ju Academic Foundation Overseas Graduate Fellowship, Korea (1994)

Graduation Award for Top Undergraduate Students, Seoul National University (1991)

Prize, National Competition in Transport Phenomena, Korean Institute of Chemical Engineers (1990)

Han-Hwa Foundation Undergraduate Fellowship, Korea (1989-1991)

Top-honors Scholarship, Seoul National University (1988)

Prize, National Students’ Scientific Invention Contest, Korea (1983)


Focus:
Multiscale Modeling and Simulation, Semiconductor Processing, Fuel Cells, Synthesis-Structure-Properties of Nanostructured Materials and Systems, Surface and Interface Chemistry, Defect and Dopant Structures and Dynamics

 

Research [Computational Nanoengineering Laboratory]:
My research has a well-balanced emphasis on fundamentals and applications.  Using atomic-level simulations my research group focuses on developing a fundamental understanding of (1) surface chemistry, (2) solid-solid and solid-fluid interfaces, and (3) defects and defect-dopant complexes.  By incorporating the fundamental knowledge and understanding into larger scale simulations, my research group also devotes our effort to addressing engineering problems encountered in the fabrication of nanoscale electronic, chemical and biological devices.  The primary goal of my research lies in developing (1) strategies for predictive multiscale, multiphysics computational models which can be utilized to guide the rational design and fabrication of future nanodevices and (2) a detailed understanding of the relationship between the synthesis, structure, and properties of nanostructured materials and systems.

Current research projects include:
(1) Synthesis, structure, and properties of oxide embedded Si and Ge nanocrystals;
(2) Growth, structure, and doping of semiconductor nanowires; 
(3) Growth, structure, and reactivity of metal nanoparticles supported on oxides;
(4) Structure and dynamics of defects and defect-dopant complexes in semiconductors, oxides, and their interfaces;
(5) Self-assembly of organic functions on semiconductor surfaces; and
(6) Electrochemical nanostructuring and plasma-surface interactions.

* Our research has been supported by: NSF, Welch, SRC, International SEMATECH, SKC, Intel, UT-Austin

Current Group members (as of 08/2006): 1 post doctoral associate, 9 Ph.D students, and 1 visiting professor.


Recent Publications (01/2005 – 08/2006; from a total of 65 peer-reviewed journal articles):

  • Y. Wang and G.S. Hwang, “P-Assisted Growth of Molecular Wires on Si(001),” Appl. Phys. Lett. 86 (2), 23108 (2005). (Selected for the January 17, 2005 issue of Virtual Journal of Nanoscale Science & Technology).
  • Y. Wang and G.S. Hwang, “Origin of Non-local Interactions in Adsorption of Polar Molecules on Si(001),” J. Chem. Phys. 122, 164706 (2005).
  • D. Pillay and G.S. Hwang, “Growth and Structure of Small Au particles on TiO2(110) Rutile,” Phys. Rev. B 72, 205422 (2005).
  • S.A. Harrison, T. Edgar, and G.S. Hwang, “Structure and Diffusion of the Diarsenic Complex in Crystalline Silicon,” Phys. Rev. B. 72, 195414 (2005).
  • S. Harrison, T. Edgar, and G.S. Hwang, “Structure, Stability, and Diffusion of Arsenic-Silicon Interstitial Pairs,” Appl. Phys. Lett. 87, 231905 (2005).
  • L. Lin, T. Kirichenko, B.R. Sahu, G.S. Hwang, S. Banerjee, ”Theoretical study of B diffusion with charged defects in strained Si,” Phys. Rev. B 72, 205206 (2005).
  • D. Yu, T.A. Kirichenko, S. Banerjee, and G.S. Hwang, “Structure and Diffusion of Excess Si Atoms in SiO2,” Phys. Rev. B 72, 205204 (2005).
  • T.A. Kirichenko, D. Yu, S. Banerjee, and G.S. Hwang, “Si interstitials at Si-SiO2 interfaces,” Phys. Rev. B 72,  35345 (2005).
  • D. Pillay, Y. Wang, and G.S. Hwang, “Growth, Structure, and Chemistry of 1B Metal Clusters supported on TiO2(110): Atomic Level Understanding from First Principles Studies,” Catalysis Today 105, 78 (2005). (Invited contribution)
  • J.A. Kenney and G.S. Hwang, “Electrochemical micromachining with ultrashort voltage pulses: two-dimensional computational model of charging dynamics and feature profile evolution,” Nanotechnology 16, S309 (2005). (Invited contribution)
  • C. Kuo and G.S. Hwang, “Structure and Interconversion of Oxygen Vacancy Related Defects on Amorphous Silica,” Phys. Rev. Lett. 97, 66101 (2006).
  • S. Harrison, T. Edgar, and G.S. Hwang, “Prediction of Anomalous Fluorine-Silicon Interstitial Pair Diffusion in Crystalline Silicon,” Phys. Rev. B-rapid communication 74, 121201 (2006).
  • D. Pillay, Y. Wang, and G.S. Hwang, “Prediction of Tetraoxygen Formation on Rutile TiO2(110),” J. Am. Chem. Soc., in press (2006).
  • S. Harrison, T. Edgar, and G.S. Hwang, “Interstitial-Mediated Mechanisms of Arsenic and Phosphorus Diffusion in Silicon,” Phys. Rev. B, in press (2006).
  • D. Pillay and G.S. Hwang, “O2-Coverage Dependent CO Oxidation on Reduced TiO2(110): A First Principles Study,” J. Chem. Phys., in press (2006).
  • S. Harrison, T. Edgar, and G.S. Hwang, “Interstitial Mediated Arsenic Clustering in Ultrashallow Junction Formation,” Electrochem. Solid-State Lett., in press (2006).
  • J. Kenney and G.S. Hwang, “Computational Analysis of Intratool Interactions in Electrochemical Micromachining with Multitip Tool Electrodes,” Electrochem. Solid-State Lett. 9, D21 (2006).
  • D. Pillay and G.S. Hwang, “Structure of Small Aun, Agn, and Cun Clusters (n=2-4) on Rutile TiO2(110): A Density Functional Theory Study,” J. Mol. Struct.-THEOCHEM 771, 129 (2006).  (Invited contribution).
  • J. Kenney and G.S. Hwang, “Etch Trends in Electrochemical Machining with Ultrashort Voltage Pulses: Prediction from Theory and Simulation,” Electrochem. Solid-State Lett. 9, D1 (2006).

 

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