Computer Engineering Assistant Professor Michael Orshansky has won the 2004 Best Paper Award from the journal of Transactions on Semiconductor Manufacturing.
Orshansky won the award for a paper he co-authored, “Characterization of spatial intrafield gate CD variability, its impact on circuit performance, and spatial mask-level correction.” The paper has helped semiconductor chip designers understand the challenges of scaled chip design, and the findings are vital for electronic design automation and high-performance circuit design.
Using new experimental procedures and advanced data analysis methods, Orshansky and two professors from other universities characterized transistor variability and discovered spatial patterns of variability. The work demonstrated that variation of minimum feature size, a key transistor property, inside a single chip is substantial in comparison with the chip-to-chip variability. The researchers also found that variation within the chip is primarily spatial and systematic.
The journal of Transactions on Semiconductor Manufacturing focuses on innovations in integrated circuit manufacturing. The journal is connected to the Components, Packaging and Manufacturing Technology Society, an international forum for microelectronics research that is a division of the Institute of Electrical and Electronics Engineers.
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